Chinese scientists have recently developed a super-thin semiconductor material measuring just 0.7 nanometers, which enhances processing speed and energy efficiency. This breakthrough could transform the global chip industry.
A team of researchers, including Liu Kaihuu from Peking University, Liu Can from Renmin University, and Zhang Guangyu from the Institute of Physics under the Chinese Academy of Sciences, has developed a fabrication method to produce semiconductor materials with a thickness of only 0.7 nanometers.
Successful production of a semiconductor material with a thickness of just 0.7 nanometers.
The researchers’ project was published in the journal Science on July 5. This breakthrough addresses a major barrier in reducing the size of traditional silicon chips, as silicon chips reach a physical limit that affects performance when devices shrink.
The Chinese scientists have explored two-dimensional (2D) transition metal dichalcogenides (TMD) as a potential alternative to silicon, with a thickness of just 0.7 nanometers compared to the conventional size of silicon, which ranges from 5 to 10 nanometers.
Moreover, TMDs consume less energy and exhibit superior electrical conductivity. As a result, this material is highly suitable for producing ultra-small transistors, which are characteristic of next-generation electronic and photonic chips.
According to the article published on Science, the technique developed by the Chinese scientists allows for the rapid creation of high-quality 2D crystals using seven different formulas, making mass production feasible.
Scientist Liu Kaohui shared with Xinhua News Agency that traditional fabrication processes, which involve assembling each atomic layer on a substrate (similar to building walls with bricks), often result in crystals that lack sufficient purity. He explained that the reason is the inability to control the arrangement of atoms during crystal growth, leading to the accumulation of impurities and crystal defects.
The research team arranged the first atomic layer on the substrate following traditional procedures. However, subsequent atoms are positioned between the substrate and the first crystal layer, pushing that atomic layer upwards like bamboo shoots to form a new layer.
This initial “surface growth” method ensures that the structure of each crystal layer is stabilized by the underlying substrate. This also effectively prevents the accumulation of crystal defects and enhances structural control.
According to a statement on the Peking University website, the technique used in this study achieves a crystal layer formation rate of 50 layers per minute, with a maximum of 15,000 layers. Furthermore, the atoms in each crystal layer are arranged entirely parallel and executed with precision.
The high-quality 2D crystals used by the team include molybdenum disulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide, niobium disulfide, niobium diselenide, and molybdenum sulfoselenide.
The researchers stated that these materials meet international standards for integrated circuit materials, including targets for electron mobility and frequency conversion according to the International Roadmap for Devices and Systems (IRDS).
Liu noted, “When used as semiconductor materials in integrated circuits, these 2D crystals can significantly enhance chip integration capabilities. On a chip the size of a fingernail, the density of transistors can increase, thereby boosting its computational power.”
